ALFE Breaks Ground on New Hwaya Project, Boosting Electronic-Grade Nitrogen Capacity to Support Advanced Semiconductor Manufacturing

Air Liquide Far Eastern today marked a significant milestone with the groundbreaking ceremony for its new plant in the Hwaya Technology Park, as part of a pre-announced investment plan. Once completed, the new facility will supply ultra-high purity nitrogen, oxygen, and argon to close semiconductor customers. The new plant is projected to boost ALFE’s existing production capacity in Hwaya Basin, thanks to energy-saving technologies and latest modular equipment, thus supporting the growing demand from Taiwan’s advanced semiconductor manufacturing sector, driven by the rise of AI technologies.

The New Hwaya Plant is ALFE’s latest capital investment project following the completion of the Smangus Site and the Guanyin CO₂ recovery unit in 2024. Since 2012, ALFE’s existing Hwaya site has been a key supplier of high-quality electronic-grade nitrogen and oxygen to semiconductor clients, serving as a major industrial gas source within the park.

Thanks to its new modular equipment, Air Liquide will not only significantly shorten the construction time but also enhance operational agility with simultaneous production of electronic-grade nitrogen, oxygen, argon, and liquid nitrogen, which enables  improved process efficiency by nearly 5%.

Olivier LETESSIER (Photo Above (Left); Source: Air Liquide Far Eastern), President of Air Liquide Far Eastern, stated, “Contributing to the development of the semiconductor industry is the cornerstone of Air Liquide Group’s ADVANCE strategic plan. With the accelerating adoption of AI, our customers are demanding more high-quality electronic-grade gases. We are proud to expand our support for this critical industry, deploying our cutting-edge technologies that also help minimize our environmental footprint. This project exemplifies our dedication to both innovation and sustainability, working hand-in-hand with our customers to fulfill our shared goals.”